Modeling and characterization of direct-tunneling current in dual-layer ultrathin-gate dielectric films

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 4, 2006, Pages 1785-1793

  Wong, Hei ^a,b   Iwai, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DIELECTRIC FILMS; DIELECTRIC MATERIALS; GAIN MEASUREMENT; GATES (TRANSISTOR); LOGIC DESIGN; MATHEMATICAL MODELS;

CLASSICAL MODEL EQUATION; DIRECT-TUNNELING (DT) CURRENT; DUAL-LAYER STACK; DUAL-LAYER ULTRATHIN-GATE DIELECTRIC FILMS;

ULTRATHIN FILMS;

EID: 33746501486     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2213268     Document Type: Article

References (40)

1. H. Wong and H. Iwai, Phys. World 18(9), 40 (2005).
2. Y. Taur et al., IBM J. Res. Dev. 39, 245 (1995).
3. H. Wong, B. Sen, V. Flip, and M. C. Poon, Thin Solid Films 504, 192 (2006).
4. H. Wong and V. A. Gritsenko, Microelectron. Reliab. 42, 597 (2002).
5. H. Momose, M. Ono, T. Yoshitomi, T. Ohguro, S. Nakamura, H. Iwai, and M. Saito, IEEE Trans. Electron Devices 43, 1233 (1996).
6. H. Wong, M. C. Poon, C. W. Kok, P. J. Chan, and V. A. Gritsenko, IEEE Trans. Electron Devices 50, 1941 (2003).
7. V. A. Gritsenko, H. Wong, R. W. M. Kwok, and J. B. Xu, J. Vac. Sci. Technol. B 21, 241 (2003).
8. M. L. Green, E. P. Gusev, R. Degraeve, and E. L. Garfunkel, J. Appl. Phys. 90, 2057 (2001).
9. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
10. H. Wong, K. L. Ng, N. Zhan, M. C. Poon, and C. W. Kok, J. Vac. Sci. Technol. B 22, 1094 (2004).
11. N. Zhan, M. C. Poon, C. W. Kok, K. L. Ng, and H. Wong, J. Electrochem. Soc. 150, F200 (2003).
12. F. Stern, Phys. Rev. B 5, 4891 (1972).
13. Z. A. Weinberg, J. Appl. Phys. 53, 5052 (1982).
14. T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
15. J. Maserjian, J. Vac. Sci. Technol. A 11, 996 (1974).
16. S.-H. Lo, D. A. Buchanan, Y. Taur, and W. Wang, IEEE Trans. Electron Devices 18, 209 (1997).
17. M. Mastrapasqua, A. Ghettii, C. T. Liu, and E. Sangiorgi, Solid-State Electron. 44, 1523 (2000).
18. N. Yang, W. K. Henson, J. R. Hauser, and J. J. Wortman, IEEE Trans. Electron Devices 46, 1464 (1999).
19. N. Yang and J. J. Wortman, Microelectron. Reliab. 41, 37 (2001).
20. K. F. Schuegraf, C. C. King, and C. Hu, Symposium of VLSI Technol. Digest of Technical Papers (IEEE, Piscataway, 1992), p. 18.
21. H. Y. Yang, H. Niimi, and G. Lucovsky, J. Appl. Phys. 83, 2327 (1998).
22. M. Lenzlinger and E. H. Snow, J. Appl. Phys. 40, 278 (1969).
23. B. L. Yang, P. T. Lai, and H. Wong, Microelectron. Reliab. 44, 709 (2004).
24. J. Lee, G. Bosman, K. R. Green, and D. Ladwig, IEEE Trans. Electron Devices 49, 1232 (2002).
25. Y. Shi, X. W. Wang, and T. P. Ma, IEEE Trans. Electron Devices 46, 362 (1999).
26. T. P. Ma, IEEE Trans. Electron Devices 45, 680 (1998).
27. V. A. Gritsenko, H. Wong, J. B. Xu, R. M. Kwok, I. P. Petrenko, B. A. Zaitsev, Yu. N. Morokov, and Yu. N. Novikov, J. Appl. Phys. 86, 3234 (1999).
28. H. Wong, M. C. Poon, Y. Gao, and T. C. W. Kok, J. Electrochem. Soc. 148, G275 (2001).
29. Z. Cui, J. J. Liou, Y. Yue, and H. Wong, Solid-State Electron. 49, 505 (2005).
30. H. Wong, IEEE Trans. Electron Devices 43, 2190 (1996).
31. H. Wong, IEEE Trans. Electron Devices 42, 2197 (1995).
32. H. Wong and Y. C. Cheng, J. Appl. Phys. 74, 7364 (1993).
33. H. Wong, N. Zhan, K. L. Ng, M. C. Poon, and C. W. Kok, Thin Solid Films 462, 96 (2004).
34. N. Zhan, M. C. Poon, H. Wong, K. L. Ng, and C. W. Kok, Microelectron. J. 36, 29 (2005).
35. P. W. Peacock and J. Robertson, Phys. Rev. Lett. 92, 057601 (2004).
36. W. J. Zhu, T.-P. Ma, T. Tamagawa, J. Kim, and Y. Di, IEEE Electron Device Lett. 23, 97 (2002).
37. H. Wong and Y. C. Cheng, J. Appl. Phys. 70, 1078 (1991).
38. B. L. Yang, H. Wong, and Y. C. Cheng, Solid-State Electron. 39, 385 (1996).
39. V. A. Gritsenko, A. V. Shaposhnikov, W. M. Kwok, and H. Wong, Thin Solid Films 437, 135 (2003).
40. V. Filip, H. Wong, and D. Nicolaescu, J. Vac. Sci. Technol. B 24, 38 (2006).