Introduction of defects into HfO2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation

Journal of Applied Physics

Volumn 100, Issue 6, 2006, Pages

  Uedono, A ^a   Naito, T ^a   Otsuka, T ^a   Shiraishi, K ^a   Yamabe, K ^a   Miyazaki, S ^b   Watanabe, H ^c   Umezawa, N ^d   Chikyow, T ^d   Akasaka, Y ^e,g   Kamiyama, S ^e   Nara, Y ^e   Yamada, K ^f  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

^c OSAKA UNIVERSITY   (Japan)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^e SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^f WASEDA UNIVERSITY   (Japan)

^g TOKYO ELECTRON LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; HAFNIUM COMPOUNDS; POSITRON ANNIHILATION SPECTROSCOPY; TITANIUM NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

PLASMA DAMAGES; POSITRON ANNIHILATION; POSITRON BEAMS; PREDEPOSITION;

DIELECTRIC MATERIALS;

EID: 33749323026     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2345618     Document Type: Article

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