Single Hf atoms inside the ultrathin SiO2 interlayer between a HfO2 dielectric film and the Si substrate: How do they modify the interface?

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 416-419

  Rashkeev, S N ^a,b   Van Benthem, K ^a   Pantelides, S T ^a,b   Pennycook, S J ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

Alternative dielectrics; Hafnium oxide; Leakage current; Scanning transmission electron microscopy

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; HAFNIUM; LEAKAGE CURRENTS; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS;

ALTERNATIVE DIELECTRICS; HAFNIUM OXIDE; INTERLAYER OXIDES; SCANNING TRANSMISSION ELECTRON MICROSCOPY (STEM);

SILICON COMPOUNDS;

EID: 19944400455     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.030     Document Type: Conference Paper

References (12)

1. L.Kang, Y. Jeon, K. Onishi, B. H. Lee, W.-J. Qi, R. Nieh, S. Gopalan, and J. C. Lee, in: Proc. 2000 Symposium on VLSI Technology, Digest of Technical Papers (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2000).
2. 2 in response to rapid thermal anneal Appl. Phys. Lett. 82 2003 1266 1268
3. S. Stemmer, Y.L. Li, B. Foran, P.S. Lysaght, S.K. Streiffer, P. Fuoss, and S. Seifert Grazing-incidence small angle x-ray scattering studies of phase separation in hafnium silicate films Appl. Phys. Lett. 83 2003 3141 3143
4. 2 dielectrics Appl. Phys. Lett. 85 2004 672 674
5. P.D. Nellist, N.F. Chisholm, N. Dellby, O.L. Krivanek, M.F. Murfitt, Z.S. Szilagyi, A.R. Lupini, A. Borisevich, W.H. Sides Jr., and S.J. Pennycook Direct sub-angstrom imaging of a crystal lattice Science 305 2004 1741 1741
6. G. Kresse, and J. Furthmüller Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set Comput. Mater. Sci. 6 1996 15 50
7. 2 interface Phys. Rev. Lett. 87 2001 165506
8. S. Wang, A.Y. Borisevich, S.N. Rashkeev, M.V. Glazoff, K. Sohlberg, S.J. Pennycook, and S.T. Pantelides Dopants adsorbed as single atoms prevent degradation of catalysts Nature Materials 3 2004 143 146
9. J.P. Perdew Density functional approximation for the correlation energy of the inhomogeneous electron gas Phys. Rev. B 33 1986 8822 8824
10. A.D. Becke Density-functional exchange-energy approximation with correct asymptotic behavior Phys. Rev. A 38 1988 3098 3100
11. D. Vanderbilt Soft self-consistent pseudopotentials in a generalized eigenvalue formalism Phys. Rev. B 41 1990 7892 7895
12. Y. Tu, and J. Tersoff Structure and energetics of the Si-SiO2 interface Phys. Rev. Lett. 84 2000 4393 4396