Modeling of screening effect on remote Coulomb scattering due to gate impurities by nonuniform free carriers in poly-Si gate

Journal of Applied Physics

Volumn 102, Issue 7, 2007, Pages

  Ishihara, Takamitsu ^a   Koga, Junji ^a   Matsuzawa, Kazuya ^a   Takagi, Shin Ichi ^b  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL ANALYSIS; COMPUTER SIMULATION; GATES (TRANSISTOR); SCATTERING; SCREENING;

COULOMB SCATTERING; FREE CARRIERS; GATE IMPURITIES; NONUNIFORM CARRIER DISTRIBUTION;

POLYSILICON;

EID: 35348908330     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2785944     Document Type: Article

References (27)

1. G. Timp, Tech. Dig. - Int. Electron Devices Meet., 930 (1997).
2. T. Yamamoto, K. Uejima, and T. Mogami, Extended Abstract of the 1999 International Conference on Solid State Devices and Materials (1999), p. 114.
3. J. Li and T.-P. Ma, J. Appl. Phys. 62, 4212 (1987).
4. M. S. Krishnan, Y. C. Yeo, Q. Lu, T.-J. King, J. Boker, and C. Hu, Tech. Dig. - Int. Electron Devices Meet., 571 (1998).
5. M. S. Krishnan, L. Chang, T.-J. King, J. Boker, and C. Hu, Tech. Dig. - Int. Electron Devices Meet., 241 (1999).
6. N. Yang, W. K. Henson, J. R. Hauser, and J. J. Wortman, IEEE Trans. Electron Devices 47, 440 (2000).
7. I. Kawashima, Y. Kamakura, and K. Taniguchi, Tech. Dig. - Int. Electron Devices Meet., 113 (2000).
8. S. Saito, K. Torii, M. Hiratani, and T. Onai, Appl. Phys. Lett. 81, 2391 (2002).
9. F. Gámiz, J. B. Roldan, J. E. Carceller, and P. Cartujo, Appl. Phys. Lett. 82, 3251 (2003).
10. D. Esseni and A. Abramo, IEEE Trans. Electron Devices 50, 1665 (2003).
11. L. D. Hallam, J. Weis, and P. A. Maksym, Phys. Rev. B 53, 1452 (1996).
12. K. M. Indlekofer, J. Knoch, and J. Appenzeller, Phys. Rev. B 72, 125308 (2005).
13. M. V. Fischetti, J. Appl. Phys. 89, 1232 (2001).
14. F. Gámiz and M. V. Fischetti, Appl. Phys. Lett. 83, 4848 (2003).
15. I. Polishchuk and C. Hu, 2001 Symposium on VLSI Technology, Digest of Technical Papers, pp. 51 (2001).
16. S. Takagi and M. Takayanagi, Jpn. J. Appl. Phys., Part 1 41, 2348 (2002).
17. J. Koga, T. Ishihara, and S. Takagi, IEEE Electron Device Lett. 24, 354 (2003).
18. F. Stern and W. E. Howard, Phys. Rev. 163, 816 (1967).
19. J. R. Meyer, Phys. Rev. B 20, 1762 (1979).
20. A. L. Fetter and J. D. Walecka, Quantum Theory of Many-Particle Systems (McGraw-Hill, New York, 1971).
21. M. V. Fischetti, J. Appl. Phys. 89, 1205 (2001).
22. S. Saito, D. Hisamoto, S. Kimura, and M. Hiratani, Tech. Dig. - Int. Electron Devices Meet., 797 (2003).
23. F. Gámiz, J. A. López-Villanueva, J. A. Jiḿnez-Tejada, I. Melchor, and A. Palma, J. Appl. Phys. 75, 924 (1994).
24. M. Kondo and H. Tanimoto, IEEE Trans. Electron Devices 48, 265 (2001).
25. G. Paasch and H. Übensee, Phys. Status Solidi B 113, 165 (1982).
26. W. Hansch, T. Vogelsang, R. Kircher, and M. Orlowski, Solid-State Electron. 32, 839 (1989).
27. R. Rios and N. D. Arora, Tech. Dig. - Int. Electron Devices Meet., 613 (1994).