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Volumn 11, Issue 9, 2008, Pages 964-983

Electrochemical pore formation onto semiconductor surfaces

Author keywords

Anodic etching; Dissolution Anodique; Electrochemistry; Electrochimie; Pore; Semiconducteurs; Semiconductors

Indexed keywords


EID: 50949123691     PISSN: 16310748     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.crci.2008.06.004     Document Type: Short Survey
Times cited : (40)

References (199)
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    • 0012113491 scopus 로고    scopus 로고
    • Electrochemical Formation and Modification of Nanocrystalline Silicon
    • Hodes G. (Ed), Wiley-VCH, Weinheim
    • Green W.H., Létant S., and Sailor M.J. Electrochemical Formation and Modification of Nanocrystalline Silicon. In: Hodes G. (Ed). Electrochemistry of Nanomaterials (2001), Wiley-VCH, Weinheim 141-167
    • (2001) Electrochemistry of Nanomaterials , pp. 141-167
    • Green, W.H.1    Létant, S.2    Sailor, M.J.3
  • 12
    • 33845971248 scopus 로고    scopus 로고
    • Porous-etched Semiconductors: Formation and Characterization
    • Hodes G. (Ed), Wiley-VCH, Weinheim
    • Kelly J.J., and Vanmaekelbergh D. Porous-etched Semiconductors: Formation and Characterization. In: Hodes G. (Ed). Electrochemistry of Nanomaterials (2001), Wiley-VCH, Weinheim 103-136
    • (2001) Electrochemistry of Nanomaterials , pp. 103-136
    • Kelly, J.J.1    Vanmaekelbergh, D.2
  • 41
    • 0001902217 scopus 로고
    • Hodes G. Nature 285 (1980) 29
    • (1980) Nature , vol.285 , pp. 29
    • Hodes, G.1
  • 160
    • 50949118689 scopus 로고    scopus 로고
    • J. van de Lagemaat, Electrochemistry of large bandgap chemically resistant semiconductors, Utrecht University, Utrecht, 1998.
    • J. van de Lagemaat, Electrochemistry of large bandgap chemically resistant semiconductors, Utrecht University, Utrecht, 1998.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.