Pore initiation and growth on n-InP(100)

Electrochimica Acta

Volumn 48, Issue 9 SPEC., 2003, Pages 1301-1308

  Schmuki, P ^a   Schlierf, U ^a   Herrmann, T ^a   Champion, G ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Light emitting porous silicon; n InP(100) substrates; Pore formation potential

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DISSOLUTION; GROWTH (MATERIALS); HYDROCHLORIC ACID; ION IMPLANTATION; MORPHOLOGY; PHOTOLUMINESCENCE;

PORE INITIATION;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0037457620     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0013-4686(02)00839-3     Document Type: Article

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