Nano- and macropore formation in p-type silicon

Journal of the Electrochemical Society

Volumn 146, Issue 9, 1999, Pages 3309-3314

  Wehrspohn, R B ^a   Ozanam, F ^b   Chazalviel, J N ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANODIC OXIDATION; CRYSTALLINE MATERIALS; ELECTROLYTES; INTERFACES (MATERIALS); MATHEMATICAL MODELS;

MACROPORE FORMATION; NANOPORE FORMATION;

POROUS SILICON;

EID: 0033365603     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1392472     Document Type: Article

References (31)

1. A. Valance, Phys. Rev. B, 55, 9706 (1997).
2. Y. Kang and J. Jorné, J. Electrochem. Soc., 144, 3104 (1997).
3. R. B. Wehrspohn, J.-N. Chazalviel, F. Ozanam, and I. Solomon, Phys. Rev. Lett., 77, 1885 (1996); R. B. Wehrspohn, J.-N. Chazalviel, F. Ozanam, and I. Solomon, Thin Solid Films, 297, 5 (1997).
4. R. B. Wehrspohn, J.-N. Chazalviel, F. Ozanam, and I. Solomon, Phys. Rev. Lett., 77, 1885 (1996); R. B. Wehrspohn, J.-N. Chazalviel, F. Ozanam, and I. Solomon, Thin Solid Films, 297, 5 (1997).
5. J.-N. Chazalviel, R. B. Wehrspohn, F. Ozanam, and I. Solomon, MRS Symp. Proc., 452, 403 (1997).
6. R. B. Wehrspohn, J.-N. Chazalviel, and F. Ozanam, J. Electrochem. Soc., 145, 2958 (1998).
7. V. P. Parkhutik, in Proceedings of International Symposium of Advanced Luminescent Materials, D. J. Lockwood, P. M. Fauchet, N. Koshida, and S. R. J. Brueck, Editors, PV 95-25, p. 105, The Electrochemical Society Proceedings Series, Penning, NJ (1996).
8. M. I. J. Beale, N. G. Chew, M. J. Uren, A. G. Cullis, and J. D. Benjamin, Appl. Phys. Lett., 46, 86 (1985).
9. R. L. Smith and S. D. Collins, J. Appl. Phys., 71, R1 (1992) and references therein.
10. P. Allongue, in INSPEC Data series, L. Canham, Editor, IEE (1997).
11. E. K. Propst and P. A. Kohl, J. Electrochem. Soc., 141, 1006 (1994).
12. M. M Rieger and P. A. Kohl, J. Electrochem. Soc., 142, 1490 (1995).
13. M. E. Glicksmann and S. P. March, in Handbook of Crystal Growth, T. J. Hurle, Editor, p. 1075, North-Holland, Amsterdam (1993).
14. E. A. Ponomarev and C. Lévy-Clément, Electrochem. Solid-State Lett., 1, 42 (1998).
15. E. A. Ponomarev and C. Lévy-Clément, J. Porous Mater., To be published.
16. V. Lehmann and S. Rönnebeck, J. Electrochem. Soc., 146, 2968 (1999).
17. H. Henisch, Semiconductor Contacts, p. 136. Clarendon Press, Oxford (1989).
18. W. W. Mullins and R. F. Sekerka, J. Appl. Phys., 35, 444 (1964).
19. R. B. Wehrspohn, Ph.D. Thesis, Ecole Polytechnique, France (1997).
20. R. Memming and G. Schwandt, Surf. Sci., 4, 109 (1966).
21. R. Memming and G. Schwandt, Surf Sci., 5, 97 (1966).
22. F. Gaspard, A Bsiesy, M. Ligeon, F. Muller, and R. Hérino, J. Electrochem. Soc., 136, 3043 (1989).
23. I. Ronga, A. Bsiesy, F. Gaspard, R. Hérino, M. Ligeon, F. Muller, and A. Halimaoui, J. Electrochem. Soc., 138, 1403 (1991).
24. C. R. Crowell and S. M. Sze, Solid-State Electron., 9, 1035 (1966).
25. Y. Kang and J. Jorné, J. Electrochem. Soc., 144, 3104 (1997).
26. B. Sapoval, Phys. Rev. Lett., 73, 3314 (1994).
27. G. Lérondel, R. Romestain, and S. Barret, J. Appl. Phys., 81, 6171 (1997).
28. H. Henisch, Private communication, 1996.
29. M. Binder, T. Edelmann, T. H. Metzger, G. Mauckner, G. Goerigk, and J. Peisl, Thin Solid Films, 276, 65 (1996).
30. A. Valance, Phys. Rev. B, 52, 8323 (1995).
31. S. Setzu, G. Lérondel, and R. Romestain, J. Appl. Phys, 84, 3129 (1998).