Formation of 〈001〉-aligned nano-scale pores on (001) n-InP surfaces by photoelectrochemical anodization in HCl

Journal of Electroanalytical Chemistry

Volumn 473, Issue 1, 1999, Pages 223-229

  Hamamatsu, A ^a   Kaneshiro, C ^a   Fujikura, H ^a   Hasegawa, H ^a  

^a Grad Sch Electronics Info E   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CRYSTAL GROWTH; CRYSTAL ORIENTATION; ELECTRIC FIELD EFFECTS; ELECTROCHEMISTRY; HYDROCHLORIC ACID; NANOSTRUCTURED MATERIALS; PHOTOCHEMICAL REACTIONS; PHOTOLUMINESCENCE; POROUS MATERIALS; SURFACE STRUCTURE;

PHOTOELECTROCHEMISTRY; QUANTUM CONFINEMENT;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0033345111     PISSN: 00220728     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0728(99)00107-2     Document Type: Article

References (21)

1. Moisson J.M., Houzay F., Barhte F., Leprince L. Appl. Phys. Lett. 64:1993;196.
2. Bhat R., Kapon E., Simhony S., Colas E., Hwang D.M., Stoffel N.G., Koza M.A. J. Cryst. Growth. 107:1991;716.
3. Fujikura H., Hasegawa H. Jpn. J. Appl. Phys. 35:1996;1333.
4. Smith R.L., Collins S.D. J. Appl. Phys. 71:1992;R1.
5. Nakagawa T., Koyama H., Koshida N. Appl. Phys. Lett. 69:1996;3206.
6. T. Nakagawa, H. Sugiyama, N. Koshida, Proceedings of the 1998 International Microprocesses and Nanotechnology Conference, Korea, July 1998, p. 158.
7. Beale M.I.J., Benjamin J.D., Uren M.J., Chew N.G., Cullis A.G. J. Cryst. Growth. 73:1985;622.
8. Smith R.L., Chuang S.-F., Collins S.D. J. Electron. Mater. 17:1988;533.
9. John G.C., Singh V.A. Phys. Rev. B. 52:1995;11125.
10. Searson P.C., Macaulay J.M., Ross F.M. J. Appl. Phys. 72:1992;253.
11. Sacilotti M., Abraham P., Champagnon B., Monteil Y., Bouix J. Electron. Lett. 29:1993;790.
12. Malone C., Jorne J. Appl. Phys. Lett. 70:1997;3537.
13. Jia L., Wong S.P., Wilson I.H. Appl. Phys. Lett. 71:1997;1391.
14. Hao M., Uchida H., Shao C., Soga T., Jimbo T., Umeno M. J. Cryst. Growth. 179:1997;661.
15. Schmuki P., Lockwood D.J., Labbé H.J., Fraser J.W. Appl. Phys. Lett. 69:1996;1620.
16. Takizawa T., Arai S., Nakahara M. Jpn. J. Appl. Phys. 33:1994;L643.
17. Takizawa T., Nakahara M., Kikuno E., Arai S. J. Electron. Mater. 25:1996;657.
18. Kikuno E., Amitti M., Takizawa T., Arai S. Jpn. J. Appl. Phys. 34:1995;177.
19. J.D. Alamo, S. Swirhum, R.M. Swanson, Proc. Int. Electron. Device Meeting (1985) 290.
20. Garbuzov D.Z., Agaev V.V., Gorelenok A.T. Sov. Phys.-Semicond. 16:1982;986.
21. Frandaon J., Fabre F, Bacquet G., Bandet J. J. Appl. Phys. 59:1986;1627.