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Volumn 69, Issue , 2000, Pages 1-10

Electrochemical preparation of porous semiconductors: From phenomenology to understanding

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTROCHEMICAL ELECTRODES; INTERFACES (MATERIALS); POROUS SILICON; SEMICONDUCTOR GROWTH;

EID: 0033906775     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00285-8     Document Type: Article
Times cited : (81)

References (67)
  • 6
    • 0002214440 scopus 로고    scopus 로고
    • L. Canham (Ed.), Properties of Porous Silicon, IEE, Exeter
    • P. Allongue, In: L. Canham (Ed.), Properties of Porous Silicon, EMIS Datareviews Series No. 18, IEE, Exeter, 1997, pp. 3-11.
    • (1997) EMIS Datareviews Series No. 18 , vol.18 , pp. 3-11
    • Allongue, P.1
  • 19
    • 85031584632 scopus 로고    scopus 로고
    • private communication (1999)
    • B.H. Erné, private communication (1999).
    • Erné, B.H.1
  • 65
    • 85031588538 scopus 로고    scopus 로고
    • Thesis, Oldenburg and Palaiseau
    • R.B. Wehrspohn, Thesis, Oldenburg and Palaiseau, 1997.
    • (1997)
    • Wehrspohn, R.B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.