Porous GaP multilayers formed by electrochemical etching

Electrochemical and Solid-State Letters

Volumn 5, Issue 5, 2002, Pages

  Tjerkstra, R W ^a,c   Rivas, J Gómez ^b   Vanmaekelbergh, D ^a   Kelly, J J ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

^b UNIVERSITY OF AMSTERDAM   (Netherlands)

^c UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DISSOLUTION; ETCHING; LUMINESCENCE; OXIDES; PORE SIZE; POROSITY; POROUS MATERIALS; REFRACTIVE INDEX; SULFURIC ACID;

ANODIC ETCHING; ELECTROCHEMICAL ETCHING; PORE DENSITY; POROUS MEMBRANES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036109961     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1466935     Document Type: Article

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