Morphology and strongly enhanced photoresponse of GaP electrodes made porous by anodic etching

Journal of the Electrochemical Society

Volumn 143, Issue 1, 1996, Pages 305-314

  Erne B H ^a   Vdnmaekelbergh, D ^a   Kelly, J J ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ELECTROCHEMISTRY; ELECTRODES; ETCHING; LIGHT ABSORPTION; MORPHOLOGY; OPTICAL PROPERTIES; PHOTOELECTRICITY; POROSITY; QUANTUM EFFICIENCY; SULFURIC ACID;

ANODIC ETCHING; GALLIUM PHOSPHIDE; LIGHT TO CURRENT CONVERSION; OPTICAL TRANSITION; OPTO-ELECTRICAL PROPERTIES; PHOTOELECTROCHEMICAL PROPERTIES; PHOTORESPONSE; PORE FORMATION; QUANTUM YIELD;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029732181     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836428     Document Type: Article

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