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Applied Surface Science

Volumn 119, Issue 1-2, 1997, Pages 160-168

The formation of porous GaAs in HF solutions

(4) Oskam, G a Natarajan, A a Searson, P C a Ross, F M b

a Johns Hopkins University (United States)

b LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

Author keywords

Electrochemical pore formation; Porous GaAs; SANS; TEM

Indexed keywords

ANISOTROPY; CRYSTAL ORIENTATION; ETCHING; MORPHOLOGY; NEUTRON SCATTERING; POROUS MATERIALS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SOLUTIONS; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

ELECTROCHEMICAL PORE FORMATION; SMALL ANGLE NEUTRON SCATTERING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031236820 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(97)00184-0 Document Type: Article

Times cited : (64)

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