Initiation and formation of porous GaAs

Journal of the Electrochemical Society

Volumn 143, Issue 10, 1996, Pages 3316-3322

  Schmuki, P ^a   Fraser, J ^a   Vitus, C M ^b   Graham, M J ^a   Isaacs, H S ^b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DISSOLUTION; ELECTROCHEMISTRY; ELECTROLYTIC POLISHING; FILMS; MICROSCOPIC EXAMINATION; OXIDES; PITTING; POROUS MATERIALS; SEMICONDUCTOR DEVICE STRUCTURES; SYNTHESIS (CHEMICAL); X RAY ANALYSIS;

LOCALIZED DISSOLUTION; PIT INITIATION PROCESS; ROUGHENING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030263249     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837204     Document Type: Article

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