Crystallographic aspects of pore formation in gallium arsenide and silicon

Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

Volumn 75, Issue 2, 1997, Pages 525-539

  Ross, F M ^a   Oskam, G ^b   Searson, P C ^b   Macaulay, J M ^c   Liddle, J A ^d  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b Johns Hopkins University   (United States)

^c Silicon Video Corporation   (United States)

^d LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038969671     PISSN: 01418610     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418619708205156     Document Type: Article

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