Effects of switched-bias annealing on charge trapping in HfO2 gate dielectrics

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3636-3643

  Zhou, X J ^a,b   Fleetwood, D M ^a,b   Tsetseris, L ^c   Schrimpf, R D ^a,b   Pantelides, S T ^c  

^a IEEE   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

Author keywords

Charge trapping; High k dielectrics; Interface traps; MOS devices; Negative bias temperature instability; Oxide trap charge; Radiation hardness assurance; Switched bias annealing

Indexed keywords

CHARGE TRAPPING; HIGH-K DIELECTRICS; INTERFACE TRAPS; NEGATIVE-BIAS TEMPERATURE INSTABILITY; OXIDE-TRAP CHARGES; RADIATION HARDNESS ASSURANCE; SWITCHED BIAS ANNEALING;

GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HIGH ENERGY PHYSICS; IONIZING RADIATION; MOS CAPACITORS; RADIATION HARDENING; SWITCHING THEORY;

ELECTRON TRAPS;

EID: 33846316114     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.884249     Document Type: Conference Paper

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