Differences between charge trapping states in irradiated nano-crystalline HfO2 and non-crystalline Hf silicates

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3644-3648

  Lucovsky, G ^a,b   Fleetwood, D M ^a,c   Lee, S ^b   Seo, H ^b   Schrimpf, R D ^a,c   Felix, J A ^a,d   Luning J ^e   Fleming, L B ^b   Ulrich, M ^b   Aspnes, D E ^b  

^a IEEE   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d SANDIA NATIONAL LABORATORIES   (United States)

^e SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

Charge trapping; Electron traps; High dielectrics; Hole traps; Metal oxide semiconductor (MOS) devices; Oxide trap charge

Indexed keywords

FILM THICKNESS; HIGH-Κ DIELECTRICS; OXIDE-TRAP CHARGE;

CHARGE TRANSFER; DIELECTRIC MATERIALS; ELECTRON TRAPS; MOS CAPACITORS; RADIATION EFFECTS; THICKNESS MEASUREMENT; X RAY ANALYSIS;

HAFNIUM COMPOUNDS;

EID: 33846266544     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.886211     Document Type: Conference Paper

References (38)

1. J. A. Felix, D. M. Fleetwood, R. D. Schrimpf, J. G. Hong, G. Lucovsky, J. R. Schwank, and M. R. Shaneyfelt, "Total dose radiation response of hafnium silicate capacitors," IEEE Trans. Nucl. Sci., vol. 49, no. 6, pp. 3191-3196, Dec. 2002.
2. J. A. Felix, J. R. Schwank, D. M. Fleetwood, M. R. Shaneyfelt, and E. P. Gusev, "Effects of radiation and charge trapping on the reliability of high-κ gate dielectrics," Microelectron. Rel., vol. 44, pp. 563-575, 2004.
3. J. Robertson, "High dielectric constant oxides," Eur. Phys. J. Appl. Phys., vol. 28, pp. 265-291, 2004.
4. P. W. Peacock and J. Robertson, "Band offsets and Schottky barrier heights of high dielectric constant oxides," J. Appl. Phys., vol. 92, pp. 4712-4721, 2002.
5. C. J. Ballhausen and H. B. Gray, Molecular Orbital Theory. New York: W.A. Benjamin, 1964.
6. G. Lucovsky, Y. Zhang, J. L. Whitten, D. G. Schlom, and J. L. Freeouf, "Separate and independent control of interfacial band alignments and dielectric constants in transition metal rare earth complex oxides," Microelectron. Eng., vol. 72, pp. 288-293, 2004.
7. G. Lucovsky, C. C. Fulton, Y. Zhang, Y. Zou, J. Luning, L. F. Edge, J. L. Whitten, R. J. Nemanich, H. Ade, D. G. Schlom, V. V. Afanase'ev, A. Stesmans, S. Zollner, D. Triyoso, and B. R. Rogers, "Conduction band-edge states associated with the removal of d-state degeneracies by the Jahn-Teller effect," IEEE Trans. Device Mater. Rel., vol. 5, no. 1, pp. 65-83, Mar. 2005.
8. 2 high-dielectric-constant gate oxide," Appl. Phys. Lett., vol. 87, 2005, 183506.
9. A. S. Foster, V. B. Sulimov, F. Lopez Gejo, A. L. Shuger, and R. M. Nieminen, "Structure and electrical levels of point defects in monoclinic zirconia," Phys. Rev. B, vol. 65, 2001, 174117.
10. A. S. Foster, F. Lopez Gejo, A. L. Shuger, and R. M. Nieminen, "Vacancy and interstitial defects in hafnia," Phys. Rev. B, vol. 65, 2002, 224108.
11. G. Lucovsky, "Narrowing the field of high-K gate dielectrics for nano-CMOS," presented at the Int. Workshop on Nano CMOS, Mishima, Japan, Jan. 29-Feb. 1, 2006, unpublished.
12. X. J. Zhou, D. M. Fleetwood, J. A. Felix, E. P. Gusev, and C. D'Emic, "Bias-temperature instabilities and radiation effects in MOS devices," IEEE Trans. Nucl Sci., vol. 52, no. 6, pp. 2231-2238, Dec. 2005.
13. J. A. Felix, M. R. Shaneyfelt, D. M. Fleetwood, J. R. Schwank, P. E. Dodd, E. P. Gusev, R. M. Fleming, and C. D'Emic, "Charge trapping and annealing in high-κ gate dielectrics," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3143-3149, Dec. 2004.
14. 2," in Ionizing Radiation Effects in MOS Devices & Circuits, T. P. Ma and P. V. Dressendorfer, Eds. New York: Wiley, 1989, pp. 87-192.
15. D. M. Fleetwood, P. S. Winokur, R. A. Reber, Jr., T. L. Meisenheimer, J. R. Schwank, M. R. Shaneyfelt, and L. C. Riewe, "Effects of oxide traps, interface traps, and 'border traps' on metal-oxide-semiconductor devices," J. Appl. Phys., vol. 73, pp. 5058-5074, 1993.
16. 2 MOS structures," IEEE Trans. Nucl. Sci., vol. 27, no. 6, pp. 1651-1657, Dec. 1980.
17. D. M. Fleetwood, "Effects of hydrogen transport and reactions on microelectronics radiation response and reliability," Micrelectron. Rel., vol. 42, pp. 523-541, 2002.
18. 2 interface," Phys. Rev. Lett., vol. 87, 2001, 165506.
19. 2 Interface," IEEE Trans. Nucl. Sci., vol. 48, no. 6, pp. 2086-2092, Dec. 2001.
20. 2 gate dielectrics," IEEE Trans. Nucl. Sci., vol. 53, no. 6, Dec. 2006.
21. 2 gate dielectric stacks," Appl. Phys. Lett., vol. 80, pp. 1975-1977, 2001.
22. D. M. Fleetwood, M. R. Shaneyfelt, W. L. Warren, J. R. Schwank, T. L. Meisenheimer, and P. S. Winokur, "Border traps: Issues for MOS radiation response and long-term reliability," Microelectron. Rel., vol. 35, pp. 403-428, 1995.
23. 2O-nitrided oxides," J. Appl. Phys., vol. 79, pp. 1583-1594, 1996.
24. D. M. Fleetwood, H. D. Xiong, Z. Y. Lu, C. J. Nicklaw, J. A. Felix, R. D. Schrimpf, and S. T. Pantelides, "Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices," IEEE Trans. Nucl. Sci., vol. 49, no. 6, pp. 2674-2683, Dec. 2002.
25. S. Stemmer, Z. Q. Chen, C. G. Levi, P. S. Lysaght, B. Foran, J. A. Gisby, and J. R. Taylor, "Application of metastable phase diagrams to silicate thin films for alternative gate dielectrics," Jpn. J. Appl. Phys. A, vol. 42, no. 6, pt. 1, pp. 3593-3597, 2003.
26. G. Lucovsky, G. B. Rayner, D. Kang, C. L. Hinkle, and J. G. Hong, "A spectroscopic phase separation study distinguishing between chemical phases with different degrees of crystallinity in Zr (Hf) silicate alloys," Surf. Sci., vol. 566, pp. 772-776, 2004.
27. J. L. Gavartin, D. Muñoz Ramo, A. L. Shluger, G. Bersuker, and B. H. Lee, "arXiv:cond-mat," vol. 1, 2006, 0605593.
28. P. M. Lenahan and P. V. Dressendorfer, "Hole traps and trivalent Si centers in MOS devices," J. Appl. Phys., vol. 55, pp. 3495-3499, 1984.
29. W. L. Warren, M. R. Shaneyfelt, D. M. Fleetwood, J. R. Schwank, P. S. Winokur, and R. A. B. Devine, "Microscopic nature of border traps in MOS oxides," IEEE Trans. Nucl. Sci., vol. 41, no. 6, pp. 1817-1827, Dec. 1994.
30. A. J. Lelis, T. R. Oldham, H. E. Boesch, Jr., and F. B. McLean, "The nature of the trapped hole annealing process," IEEE Trans. Nucl. Sci., vol. 36, no. 6, pp. 1808-1815, Dec. 1989.
31. 2," Phys. Rev. Lett., vol. 89, 2002, 285505.
32. 2," J. Appl. Phys., vol. 95, pp. 2518-2526, 2004.
33. 2 by spectroscopic ellipsometry," J. Vac. Sci. Technol. A, vol. 22, pp. 1337-1341, 2004.
34. y/Si interface on electrical characteristics of MOS devices," IEEE Trans. Electron Devices, vol. 53, no. 1, pp. 63-70, Jan. 2006.
35. 2 gate dielectrics," Microelectron. Eng., vol. 80, pp. 110-113, 2005.
36. t instabilities in high-κ dielectrics: Jahn-Teller effect or oxygen vacancies," IEEE Trans. Device Mater. Rel., vol. 6, no. 2, pp. 132-135, Jun. 2006.
37. P. D. Kirsch, J. Sim, S. Song, S. Krishnan, J. Peterson, H. Li, M. Quevedo-Lopez, C. Young, R. Choi, N. Moumen, P. Majhi, Q. Wang, J. Ekerdt, G. Bersuker, and B. Lee, "Mobility enhancement of high-k gate stacks through reduced transient changing," in Proc. ESSDERC, Grenoble, France, Sep. 12-16, 2005, pp. 367-370.
38. B. Ju, "Properties of Zr-Si Oxynitride Dielectric Alloys," Ph.D. dissertation, North Carolina State Univ., Raleigh, 2000.