Electron spin resonance observations of oxygen deficient silicon atoms in the interfacial layer of hafnium oxide based metal-oxide-silicon structures

Applied Physics Letters

Volumn 90, Issue 17, 2007, Pages

  Ryan, J T ^a   Lenahan, P M ^a   Bersuker, G ^b   Lysaght, P ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM OXIDE; INTERFACIAL LAYERS; METAL OXIDE SILICON STRUCTURES;

HAFNIUM COMPOUNDS; MAGNETIC RESONANCE MEASUREMENT; OXYGEN; PARAMAGNETIC RESONANCE; RELIABILITY; SURFACE CHEMISTRY;

SILICON;

EID: 34248582840     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2734478     Document Type: Article

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