Origin of Vt instabilities in high-k dielectrics Jahn-Teller effect or oxygen vacancies

IEEE Transactions on Device and Materials Reliability

Volumn 6, Issue 2, 2006, Pages 132-135

  Ribes, Guillaume ^a,b   Bruyere S ^a   Roy, D ^a   Parthasarthy, C ^a   Muller M ^c   Denais, M ^a,d   Huard, V ^c   Skotnicki, T ^a   Ghibaudo, G ^b  

^a STMICROELECTRONICS   (France)

^b Grenoble INP Phelma   (France)

^c NXP SEMICONDUCTORS   (Netherlands)

^d AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

HfO2; HfSiON; High k; Positive bias temperature instability (PBTI)

Indexed keywords

DEFECTS; ELECTRON TRAPS; HAFNIUM COMPOUNDS; INORGANIC COMPOUNDS; OXYGEN; THERMODYNAMIC STABILITY;

HAFNIA; OXYGEN VACANCIES; POSITIVE BIAS TEMPERATURE INSTABILITY (PBTI);

DIELECTRIC MATERIALS;

EID: 33748116912     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2006.877867     Document Type: Conference Paper

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