Charging effects on reliability of HfO2 devices with polysilicon gate electrode

IEEE International Reliability Physics Symposium Proceedings

Volumn 2002-January, Issue , 2002, Pages 419-420

  Onishi, K ^a   Kang, Chang Seok ^a   Choi, Rino ^a   Cho, Hag Ju ^a   Gopalan, S ^a   Nieh, R ^a   Krishnan, S ^a   Lee, J C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Capacitors; Dielectric breakdown; Electrodes; Hafnium oxide; Leakage current; MOS devices; MOSFET circuits; Negative bias temperature instability; Stress; Temperature dependence

Indexed keywords

CAPACITORS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRODES; ELECTROLYTIC CAPACITORS; HAFNIUM OXIDES; LEAKAGE CURRENTS; MOS CAPACITORS; MOS DEVICES; MOSFET DEVICES; NEGATIVE TEMPERATURE COEFFICIENT; POLYCRYSTALLINE MATERIALS; POLYSILICON; REFRACTORY METAL COMPOUNDS; RELIABILITY; STABILITY; STRESSES; TEMPERATURE DISTRIBUTION; THERMODYNAMIC STABILITY;

BIAS TEMPERATURE INSTABILITY; CHARGING EFFECT; MOSFET CIRCUITS; NEGATIVE BIAS TEMPERATURE INSTABILITY; POLYSILICON GATE ELECTRODES; POTENTIAL SCALING; TEMPERATURE DEPENDENCE; TIME DEPENDENT DIELECTRIC BREAKDOWN;

INTEGRATED CIRCUITS;

EID: 84949233726     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2002.996675     Document Type: Conference Paper

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