Special reliability features for Hf-based high-k gate dielectrics

IEEE Transactions on Device and Materials Reliability

Volumn 5, Issue 1, 2005, Pages 36-44

  Ma, T P ^a   Bu, Huiming M ^a   Wang, X W ^a   Song, Liyang Y ^a   He, W ^a   Wang, Miaomiao ^a   Tseng, H H ^b   Tobin, P J ^b  

^a YALE UNIVERSITY   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

Gate dielectrics; High k; Metal gates versus poly Si gates; Operating lifetime; Reliability; Trapping

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON TRAPS; ELECTRON TUNNELING; HAFNIUM; MOSFET DEVICES; POLYSILICON; RELIABILITY; THRESHOLD VOLTAGE;

HIGH-Κ DIELECTRICS; METAL GATES VERSUS POLY SI GATES; OPERATING LIFETIME; TRAPPING;

DIELECTRIC MATERIALS;

EID: 20444477538     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2005.845329     Document Type: Article

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