Stable trapping of electrons and holes in deposited insulating oxides: Al2O3, ZrO2, and HfO2

Journal of Applied Physics

Volumn 95, Issue 5, 2004, Pages 2518-2526

  Afanas'ev, V V ^a   Stesmans, A ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; DIELECTRIC MATERIALS; ELECTRON TUNNELING; HOLE TRAPS; INSULATING MATERIALS; PERMITTIVITY; PHOTONS; THIN FILMS;

CHARGE COMPENSATION; HIGH PERMITTIVITY METAL OXIDES;

ELECTRON TRAPS;

EID: 1642364918     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1641521     Document Type: Article

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