Total ionizing dose effects in MOS oxides and devices

IEEE Transactions on Nuclear Science

Volumn 50 III, Issue 3, 2003, Pages 483-499

  Oldham, T R ^a   McLean, F B ^b  

^a NASA GODDARD SPACE FLIGHT CENTER   (United States)

^b NONE

Author keywords

CMOS; Ionizing radiation; Microelectronics; MOS; Radiation effects

Indexed keywords

DOSIMETRY; ELECTRON TRANSPORT PROPERTIES; ELECTRON TRAPS; INTERFACES (MATERIALS); MICROELECTRONICS; MOS DEVICES; RADIATION EFFECTS; SEMICONDUCTING SILICON; SILICA; SPACE APPLICATIONS;

CHARGE GENERATION; INTERFACE TRAP FORMATION; IONIZING DOSE EFFECTS; PHYSICAL MECHANISMS;

IONIZING RADIATION;

EID: 0038107834     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.812927     Document Type: Article

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