Intrinsic band edge traps in nano-crystalline HfO2 gate dielectrics

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 110-113

  Lucovsky, G ^a   Zhang, Y ^a   Luning, J ^b   Afanase'v, V V ^c   Stesmans, A ^c   Zollner, S ^d   Triyoso, D ^d   Rogers, B R ^e   Whitten, J L ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d Freescale Corporation   (United States)

^e VANDERBILT UNIVERSITY   (United States)

Author keywords

Band edge traps; Conduction band states; Jahn Teller term splittings; Photoconductivity; Spectroscopic ellipsometry; X ray absorption spectroscopy

Indexed keywords

ABSORPTION SPECTROSCOPY; BAND STRUCTURE; BONDING; DEPOSITION; ELECTRON ENERGY LEVELS; ELLIPSOMETRY; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; NANOSTRUCTURED MATERIALS; PHOTOCONDUCTIVITY; THIN FILMS; X RAY SPECTROSCOPY;

BAND EDGE TRAPS; CONDUCTION BAND STATES; JAHN-TELLER TERM SPLITTINGS; SPECTROSCOPIC ELLIPSOMETRY; X-RAY ABSORPTION SPECTROSCOPY;

DIELECTRIC FILMS;

EID: 19944387296     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.052     Document Type: Conference Paper

References (7)

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2. S. Zollner and D. Tyrioso, and B.R. Rogers and S. Zollner, unpublished.
3. V.V. Afanas'ev, and A. Stesmans Appl. Phys. Lett. 80 2002 1957
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5. G. Lucovsky, et al. IEEE Trans. on Mat. and Device Reliability (2005), in press.
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7. J. Robertson, et al., in Ref. 4.