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Semiconductor Science and Technology

Volumn 16, Issue 12, 2001, Pages

Defect generation in Si/SiO2/ZrO2/TiN structures: the possible role of hydrogen

(4) Houssa, M a,c Afanas'ev, V V a Stesmans, A a Heyns, M M b

a UNIVERSITY OF LEUVEN (Belgium)

b IMEC (Belgium)

c AIX MARSEILLE UNIVERSITÉ (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DIELECTRIC MATERIALS; ELECTRONS; HYDROGEN; INTERFACES (MATERIALS); POSITIVE IONS; SILICA; ZIRCONIA;

GATE DIELECTRIC STACK; HYDROGEN-INDUCED DEFECTS;

CRYSTAL DEFECTS;

EID: 0035655162 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/16/12/102 Document Type: Letter

Times cited : (18)

References (21)

1
- 0000020022
- (2000) Appl. Phys. Lett. , vol.76 , pp. 436
- Copel, M.¹ Gribelyuk, M.² Gusev, E.³

2
- 14344277175
- (2000) Phys. Rev. Lett. , vol.85 , pp. 4120
- Krug, C.¹ Da Rosa, E.B.O.² De Almeida, R.M.C.³ Morais, J.⁴ Baumvol, I.J.R.⁵ Salgado, T.D.M.⁶ Stedile, F.C.⁷

3
- 0001705774
- (2000) Appl. Phys. Lett. , vol.77 , pp. 130
- Kwo, J.¹ Hong, M.² Kortan, A.R.³ Queeney, K.T.⁴ Chabal, Y.J.⁵ Mannaerts, J.P.⁶ Boone, T.⁷ Krajewski, J.J.⁸ Sergent, A.M.⁹ Rosamilia, J.M.¹⁰

4
- 0035127986
- (2001) Semicond. Sci. Technol. , vol.16 , pp. 31
- Houssa, M.¹ Naili, M.² Zhao, C.³ Bender, H.⁴ Heyns, M.M.⁵ Stesmans, A.⁶

5
- 33744905856
- (1995) J. Appl. Phys. , vol.78 , pp. 3883
- DiMaria, D.J.¹ Cartier, E.²

6
- 0004005306
- (New York: Wiley)
- (1969) Physics of Semiconductor Devices
- Sze, S.M.¹

7
- 0037852815
- (1999) Phys. Rev. Lett. , vol.83 , pp. 372
- Blöchl, P.E.¹ Stathis, J.H.²

8
- 0033359773
- (1999) J. Electrochem. Soc. , vol.146 , pp. 3409
- Afanas'ev, V.V.¹ Stesmans, A.²

9
- 0000635723
- (1994) Phys. Rev. B , vol.49 , pp. 10278
- Arnold, D.¹ Cartier, E.² DiMaria, D.J.³

10
- 0000990361
- (2001) J. Appl. Phys. , vol.89 , pp. 792
- Houssa, M.¹ Naili, M.² Heyns, M.M.³ Stesmans, A.⁴

11
- 0000353360
- (1983) Phys. Rev. Lett. , vol.24 , pp. 2224
- Pankove, J.I.¹ Carlson, D.E.² Berkeyheiser, J.E.³ Wance, R.O.⁴

12
- 0141508296
- (1975) Phys. Rev. B , vol.12 , pp. 2455
- Scher, H.¹ Montroll, E.W.²

13
- 0000947294
- (1977) Phys. Rev. B , vol.15 , pp. 1052
- McLean, F.B.¹ Ausman, G.A.²

14
- 0024934649
- (1989) IEEE Trans. Nucl. Sci. , vol.36 , pp. 1848
- Saks, N.S.¹ Brown, D.B.²

15
- 33747312283
- (1991) J. Appl. Phys. , vol.70 , pp. 3734
- Brown, D.B.¹ Saks, N.S.²

16
- 0027642589
- (1993) Microelectron. Eng. , vol.22 , pp. 65
- Krauser, J.¹ Wulf, F.² Briere, M.A.³ Steiger, J.⁴ Bräunig, D.⁵

17
- 0001035776
- (1998) Phys. Rev. Lett. , vol.80 , pp. 5176
- Afanas'ev, V.V.¹ Stesmans, A.²

18
- 36449004024
- (2000) J. Appl. Phys. , vol.76 , pp. 3595
- Buchanan, D.A.¹ Marwick, A.D.² DiMaria, D.J.³ Dori, J.⁴

19
- 0001466860
- (1991) Appl. Phys. Lett. , vol.59 , pp. 3437
- Krick, J.T.¹ Lenahan, P.M.² Dunn, G.J.³

20
- 0001010459
- (1994) Appl. Phys. Lett. , vol.64 , pp. 1690
- Vuillaume, D.¹ Deresmes, D.² Stievenard, D.³

21
- 0001413063
- (1996) Appl. Phys. Lett. , vol.68 , pp. 1669
- Stathis, J.H.¹

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