Identification of the atomic scale defects involved in radiation damage in HfO 2 based MOS devices

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 2272-2275

  Ryan, J T ^a,b   Lenahan, P M ^a,b   Kang, A Y ^a,b   Conley Jr , J F ^a,c   Bersuker, G ^a,d   Lysaght, P ^d  

^a IEEE   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c SHARP LABORATORIES OF AMERICA   (United States)

^d SEMATECH   (United States)

Author keywords

ALD; Electron traps; ESR; Gamma irradiation; Hafnium oxide; High k

Indexed keywords

ALD; GAMMA IRRADIATION; HAFNIUM OXIDE; HIGH-K;

DIELECTRIC MATERIALS; ELECTRON TRAPS; GAMMA RAYS; HAFNIUM COMPOUNDS; PARAMAGNETIC RESONANCE; SILICON;

RADIATION DAMAGE;

EID: 33144463166     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860665     Document Type: Conference Paper

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