Precise and simple methods for detection of initial defects in 1.2 NM gate dielectrics based on nonlinear conductions

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 63-70

  Suto, Hiroyuki ^a   Muratomi, Tomonori ^a   Ebihara, Kana ^a   Kanno, Michihiro ^a   Gocho, Tetsuo ^a   Nagashima, Naoki ^a  

^a SONY CORPORATION   (Japan)

Author keywords

Defect; Gate dielectrics; Power law; Progressive breakdown; SiON; TDDB; TZDB

Indexed keywords

POWER LAW; PROGRESSIVE BREAKDOWN;

ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; LEAKAGE CURRENTS; MOSFET DEVICES; ULTRATHIN FILMS;

GATE DIELECTRICS;

EID: 34250718135     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251192     Document Type: Conference Paper

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