Detection of thin oxide (3.5 nm) dielectric degradation due to charging damage by rapid-ramp breakdown

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2000, Pages 377-388

  Hook, Terence B ^a   Harmon, David ^a   Lin, Chuan ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENT MEASUREMENT; HOT CARRIERS; OXIDES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; THRESHOLD VOLTAGE;

CHARGING DAMAGE; RAPID-RAMP BREAKDOWN;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0033741526     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (20)