Enhancement in soft breakdown occurrence of ultra-thin gate oxides caused by photon effect in rapid thermal post-oxidation annealing

Solid-State Electronics

Volumn 44, Issue 8, 2000, Pages 1405-1410

  Huang, Chia Hong ^a   Hwu, Jenn Gwo ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; ELECTRIC BREAKDOWN OF SOLIDS; LEAKAGE CURRENTS; OXIDATION; PHOTONS; RAPID THERMAL ANNEALING; ULTRATHIN FILMS;

HARD BREAKDOWN (HBD); RAPID THERMAL POST OXIDATION ANNEALING (POA); SOFT BREAKDOWN (SBD);

SEMICONDUCTING FILMS;

EID: 0033723854     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00100-3     Document Type: Article

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