Analytic modeling of leakage current through multiple breakdown paths in SiO2 films

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2001, Pages 367-379

  Miranda, E ^a   Sune J ^a  

^a UNIVERSIDAD DE BUENOS AIRES   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC INSULATORS; ELECTRON TRANSPORT PROPERTIES; LEAKAGE CURRENTS; MATHEMATICAL MODELS; POINT CONTACTS; SILICA; ULTRATHIN FILMS; VECTOR QUANTIZATION;

DIELECTRIC BREAKDOWN; MULTIPLE BREAKDOWN PATHS; QUANTUM POINT CONTACT; ULTRATHIN SILICA FILMS;

MOSFET DEVICES;

EID: 0035018944     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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