Initial gate leakage in ultra thin SiO2 - The role of a brief stress

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn 2003-January, Issue , 2003, Pages 122-125

  Cheung, K P ^a  

^a RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; RECONFIGURABLE HARDWARE;

DETECTION METHODS; ELECTRICAL STRESS; GATE LEAKAGES; GATE-LEAKAGE MEASUREMENTS; PLASMA CHARGING; SOFT BREAKDOWN; STRESS-INDUCED LEAKAGE CURRENT; ULTRA-THIN OXIDE;

DAMAGE DETECTION;

EID: 84973643448     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PPID.2003.1200938     Document Type: Conference Paper

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