Transport characteristics of posthard breakdown thin silicon oxide films and consideration of physical models

Journal of Applied Physics

Volumn 91, Issue 7, 2002, Pages 4298-4306

  Omura, Yasuhisa ^a   Komiya, Kenji ^a  

^a KANSAI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN CURRENTS; CONDUCTION MECHANISM; CURRENT FLUCTUATIONS; CURRENT STRESS; DIFFERENTIAL RESISTANCES; ELECTRON FLOW; FINAL STATE; HARD BREAKDOWN; PHYSICAL MODEL; PRE-BREAKDOWN BEHAVIOR; SOFT BREAKDOWN; THIN OXIDE FILMS; THIN SILICON OXIDE; TIME CONSTANTS; TRANSPORT CHARACTERISTICS;

ENERGY BARRIERS; MODELS; SILICON OXIDES; SPECTRUM ANALYSIS;

OXIDE FILMS;

EID: 0036535971     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1455686     Document Type: Article

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