Exponential dependence of percolation resistance on gate voltage and its impacts on progressive breakdown

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 602-603

  Lo, V L ^a   Pey, K L ^a   Tung, C H ^b   Ang, D S ^a   Tang, L J ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EXPONENTIAL DEPENDENCE; GATE VOLTAGE; PERCOLATION RESISTANCE; RAPID DEGRADATION;

DEGRADATION; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; HARDNESS; HEATING;

ELECTRIC POTENTIAL;

EID: 28744433576     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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3. J.H. Stathis, J. Appl Phys., 86, p.5757, 1999.
4. K.L. Pey et al., IEDM Tech. Dig. 2004, p.717.
5. K.L. Pey et al., Microelectron. Reliab., 43, p. 1471, 2003.
6. C.H. Tung et al., Appl. Phys. Lett., 83, p.2223, 2003.