SCOPUS 정보 검색 플랫폼

Microelectronics Reliability

Volumn 45, Issue 5-6, 2005, Pages 845-848

Structure of the oxide damage under progressive breakdown

(6) Palumbo, F a Condorelli, G a Lombardo, S a Pey, K L b Tung, C H c Tang, L J b,c

a CNR IMM (Italy)

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

c INSTITUTE OF MICROELECTRONICS (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN (BD); CONSTANT VOLTAGE STRESS (CVS); ELECTRO-THERMAL EFFECTS; ULTRA-THIN GATE OXIDES;

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; LEAKAGE CURRENTS; MOS CAPACITORS; PERMITTIVITY; TRANSMISSION ELECTRON MICROSCOPY;

GATES (TRANSISTOR);

EID: 14644396609 PISSN: 00262714 EISSN: None Source Type: Journal
DOI: 10.1016/j.microrel.2004.11.034 Document Type: Conference Paper

Times cited : (18)

References (8)

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2
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- Tung, C.H.¹ Pey, K.L.² Lin, W.H.³ Radhakrishnan, M.K.⁴

5
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- S. Lombardo, F. Crupi, A. La Magna, C. Spinella, A. Terrasi, and A. La Mantia J Appl Phys 84 1998 472
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6
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7
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8
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- Palumbo F, Lombardo S, Pey KL, Tang LJ, Tung CH, Lin WH, et al. In: Proc IEEE IRPS, 2004
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.