Model for the current-voltage characteristics of ultrathin gate oxides after soft breakdown

Journal of Applied Physics

Volumn 84, Issue 8, 1998, Pages 4351-4355

  Houssa, M ^a   Nigam, T ^a   Mertens, P W ^a   Heyns, M M ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001004010     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368654     Document Type: Article

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