Comparison of oxide leakage currents induced by ion implantation and high field electric stress

Solid-State Electronics

Volumn 45, Issue 8, 2001, Pages 1355-1360

  Goguenheim, D ^a   Bravaix, A ^a   Monserie, C ^b   Moragues, J M ^b   Lambert, P ^b   Boivin, P ^b  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Boron; Fowler Nordheim stress; Ion implantation; SiO2 oxide; Stress induced leakage currents; Thermal anneal

Indexed keywords

BORON; CAPACITANCE; ELECTRIC FIELD EFFECTS; GATES (TRANSISTOR); ION IMPLANTATION; LEAKAGE CURRENTS; MOS DEVICES; POSITIVE IONS; RAPID THERMAL ANNEALING; SILICA;

STRESS INDUCED LEAKAGE CURRENTS (SILC);

THIN FILMS;

EID: 0035416629     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00265-3     Document Type: Article

References (24)

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