Impact of stress induced leakage current on power-consumption in ultra-thin gate oxides

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 102-109

  Lai, W ^a   Sune J ^b   Wu, E ^a   Nowak, E ^a  

^a IBM MICROELECTRONICS   (United States)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Oxide reliability; Power consumption; SILC

Indexed keywords

ELECTRIC POWER UTILIZATION; GATES (TRANSISTOR); RELIABILITY;

LOG-NORMAL DISTRIBUTION; OXIDE RELIABILITY; RELIABILITY ASSESSMENTS; SILC; STRESS-INDUCED LEAKAGE CURRENT; SYSTEMATIC STUDY; ULTRA THIN GATE OXIDE; ULTRA-THIN OXIDE;

WEIBULL DISTRIBUTION;

EID: 84932160833     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315308     Document Type: Conference Paper

References (8)

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