SCOPUS 정보 검색 플랫폼

Volumn 45, Issue 5-6, 2005, Pages 869-874

Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance

b IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; SWITCHES; TRANSISTORS;

DIGITAL SWITCHES; SOURCE CURRENTS; STRESS VOLTAGE; TRANSISTOR PERFORMANCE;

SILICON COMPOUNDS;

EID: 14644432479 PISSN: 00262714 EISSN: None Source Type: Journal
DOI: 10.1016/j.microrel.2004.10.027 Document Type: Conference Paper

Times cited : (7)

References (9)

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- Weir, B.E.¹ Alam, M.A.² Silverman, P.J.³ Baumann, F.⁴ Monroe, D.⁵ Bude, J.D.⁶

2
- 0035416878
- Two-step stress methodology for monitoring the gate oxide degradation in MOS devices
- R. Rodríguez, E. Miranda, M. Nafría, J. Suñé, and X. Aymerich Two-step stress methodology for monitoring the gate oxide degradation in MOS devices Solid State Electron 45 2001 1317 1325
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- Rodríguez, R.¹ Miranda, E.² Nafría, M.³ Suñé, J.⁴ Aymerich, X.⁵

3
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- On the mechanism of electron trap generation in gate oxides
- W.D. Zhang, J.F. Zhang, M. Lalor, D. Burton, G. Groeseneken, and R. Degraeve On the mechanism of electron trap generation in gate oxides Microelec Eng 59 2001 89 94
- (2001) Microelec Eng , vol.59 , pp. 89-94
- Zhang, W.D.¹ Zhang, J.F.² Lalor, M.³ Burton, D.⁴ Groeseneken, G.⁵ Degraeve, R.⁶

4
- 0141792795
- Compatibility of silicon gates with hafnium-based gate dielectrics
- D.C. Gilmer, R. Hegde, R. Cotton, J. Smith, L. Dip, and R. Garcia Compatibility of silicon gates with hafnium-based gate dielectrics Microelec Eng 69 2003 138 144
- (2003) Microelec Eng , vol.69 , pp. 138-144
- Gilmer, D.C.¹ Hegde, R.² Cotton, R.³ Smith, J.⁴ Dip, L.⁵ Garcia, R.⁶

5
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- Monsieur F. In: Proc INFOS 2003. p. IT1
- Proc INFOS 2003
- Monsieur, F.¹

6
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- Weibull slope and voltage acceleration of ultrathin oxynitrides
- R. O'Connor, R. Degraeve, B. Kaczer, G. Hughes, and G. Groeseneken Weibull slope and voltage acceleration of ultrathin oxynitrides Microelec Eng 72 2004 61 65
- (2004) Microelec Eng , vol.72 , pp. 61-65
- O'Connor, R.¹ Degraeve, R.² Kaczer, B.³ Hughes, G.⁴ Groeseneken, G.⁵

7
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- Temperature accelerated breakdone in ultra-thin SiON dielectrics
- R. O'Connor, G. Hughes, R. Degraeve, and B. Kaczer Temperature accelerated breakdone in ultra-thin SiON dielectrics Semicond Sci Technol 19 2004 1254 1258
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8
- 0037972834
- Collapse of MOSFET drain current after soft breakdown and its dependence on the transistor aspect ratio W/L
- Cester A, Cimino S, Paccagnella A, Ghiaini G, Guegan G. Collapse of MOSFET drain current after soft breakdown and its dependence on the transistor aspect ratio W/L. In: Proc IRPS 2003. p. 189-95
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9
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- Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: A case study
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- Kaczer, B.¹ Degraeve, R.² Rasras, M.³ De Keersgieter, A.⁴ Van De Mieroop, K.⁵ Groeseneken, G.⁶

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