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Volumn 44, Issue 1, 2004, Pages 163-166

Single-equation model for low and high voltage soft breakdown conduction

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC CONDUCTANCE; EXTRAPOLATION; MOS CAPACITORS; POINT CONTACTS; QUANTUM THEORY; STATISTICAL METHODS; THRESHOLD VOLTAGE;

EID: 0346151210     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00194-X     Document Type: Article
Times cited : (4)

References (12)
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    • Prentice Hall
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  • 2
    • 0037371968 scopus 로고    scopus 로고
    • Practical compact modeling approaches and options for sub-0.1 μm CMOS technologies
    • Chan M., Xi X., He J., Cao K., Dunga M., Niknejad A., et al. Practical compact modeling approaches and options for sub-0.1 μm CMOS technologies. Microelectron Reliab. 43:2003;399-404.
    • (2003) Microelectron Reliab , vol.43 , pp. 399-404
    • Chan, M.1    Xi, X.2    He, J.3    Cao, K.4    Dunga, M.5    Niknejad, A.6
  • 4
    • 0040752625 scopus 로고    scopus 로고
    • Post-radiation-induced soft breakdown conduction properties as a function of temperature
    • Cester A., Paccagnella A., Suñé J., Miranda E. Post-radiation-induced soft breakdown conduction properties as a function of temperature. Appl. Phys. Lett. 79:2001;1336.
    • (2001) Appl. Phys. Lett. , vol.79 , pp. 1336
    • Cester, A.1    Paccagnella, A.2    Suñé, J.3    Miranda, E.4
  • 5
    • 0030785003 scopus 로고    scopus 로고
    • Electrical stress-induced variable range hopping conduction in ultrathin silicon dioxides
    • Okada K., Taniguchi K. Electrical stress-induced variable range hopping conduction in ultrathin silicon dioxides. Appl. Phys. Lett. 70:1997;351.
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 351
    • Okada, K.1    Taniguchi, K.2
  • 6
    • 0001004010 scopus 로고    scopus 로고
    • Model for the current-voltage characteristics of ultrathin gate oxides after soft breakdown
    • Houssa M., Nigam T., Mertens P., Heyns M. Model for the current-voltage characteristics of ultrathin gate oxides after soft breakdown. J. Appl. Phys. 84:1998;4351.
    • (1998) J. Appl. Phys. , vol.84 , pp. 4351
    • Houssa, M.1    Nigam, T.2    Mertens, P.3    Heyns, M.4
  • 7
    • 0347150007 scopus 로고    scopus 로고
    • PhD thesis, Katholieke Universiteit Leuven
    • Nigam T. PhD thesis, Katholieke Universiteit Leuven, 1999. p. 64.
    • (1999) , pp. 64
    • Nigam, T.1
  • 8
    • 0028755085 scopus 로고
    • Quasi-breakdown of ultrathin gate oxide under high field stress
    • Lee S, Cho B, Kim J, Choi S. Quasi-breakdown of ultrathin gate oxide under high field stress. In: Proc. IEEE IEDM, 1994. p. 605.
    • (1994) Proc. IEEE IEDM , pp. 605
    • Lee, S.1    Cho, B.2    Kim, J.3    Choi, S.4
  • 9
    • 0042152557 scopus 로고    scopus 로고
    • Analytical modeling of quasi-breakdown of ultrathin gate oxides under constant current stressing
    • Yoshida T, Miyazaki S, Hirose M. Analytical modeling of quasi-breakdown of ultrathin gate oxides under constant current stressing. In: Ext Abs SSDM, 1996. p. 539.
    • (1996) Ext Abs SSDM , pp. 539
    • Yoshida, T.1    Miyazaki, S.2    Hirose, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.