Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides

IEEE Electron Device Letters

Volumn 20, Issue 6, 1999, Pages 262-264

  Wu, Yider ^a   Xiang, Qi ^a   Bang, David ^a   Lucovsky, Gerald ^b   Lin, Ming Ren ^a  

^a ADVANCED MICRO DEVICES   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN OF SOLIDS; OXIDES;

TIME DEPENDENT DIELECTRIC WEAROUT (TDDW); ULTRATHIN GATE OXIDES;

GATES (TRANSISTOR);

EID: 0032689171     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.767092     Document Type: Article

References (8)

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