Structure of the breakdown spot during progressive breakdown of ultra-thin gate oxides

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 583-584

  Palumbo, F ^a   Lombardo, S ^a   Pey, K L ^b   Tang, L J ^b,c   Tung, C H ^c   Lin, W H ^d   Radhakrishnan, M K ^e   Falci, G ^f  

^a CNR IMM   (Italy)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d Chartd Semiconduct Mfg Ltd   (Singapore)

^e NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^f UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

FOCUSED ION BEAMS (FIB); SHORT CHANNEL DEVICES; ULTRA-THIN GATE OXIDES;

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; HIGH TEMPERATURE EFFECTS; ION BEAMS; MOSFET DEVICES; POLYSILICON; TRANSMISSION ELECTRON MICROSCOPY; VISCOSITY;

GATES (TRANSISTOR);

EID: 3042520506     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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