New insight into gate dielectric breakdown induced MOSFET degradation by novel percolation path resistance measurements

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 717-720

  Pey, K L ^a   Lo, V L ^a   Tung, C H ^b   Chandra, W ^a   Tang, L J ^a,b   Ang, D S ^b   Ranjan, R ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DRAIN; DOPANTS; EXTERNAL RESISTANCE; GATE DIELECTRICS; DIELECTRIC BREAKDOWN MODEL; DIELECTRICS BREAKDOWN; DOPANT REDISTRIBUTION; EFFECTIVE RESISTANCES; GATE DIELECTRIC BREAKDOWN; MOSFET DEGRADATION; PATH RESISTANCE; PERCOLATION PATH; RESISTANCE MEASUREMENT; SIMPLE++;

DEGRADATION; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ENERGY DISSIPATION; FINITE ELEMENT METHOD; GATES (TRANSISTOR); PERCOLATION (SOLID STATE); TEMPERATURE DISTRIBUTION; ULTRATHIN FILMS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; GATE DIELECTRICS; SOLVENTS;

MOSFET DEVICES;

EID: 21644434885     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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