Degradation of the characteristics of p+ poly MOS capacitors with NO nitrided gate oxide due to post nitrogen annealing

International Integrated Reliability Workshop Final Report

Volumn , Issue , 1997, Pages 142-143

  Mazumder, M K ^a   Teramoto, A ^a   Kobayashi, K ^a   Sekine, M ^a   Kawazu, S ^a   Koyama, H ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; DEGRADATION; HIGH TEMPERATURE PROPERTIES; LEAKAGE CURRENTS; MOS DEVICES; SEMICONDUCTING BORON; SUBSTRATES;

CHARGE TRAPPING; POST NITROGEN ANNEALING;

OXIDES;

EID: 0031380178     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)