Influence of soft breakdown on NMOSFET device characteristics

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1999, Pages 82-87

  Pompl, T ^a   Wurzer, H ^a   Kerber, M ^a   Wilkins, R C W ^a   Eisele, I ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC CHARGE; GATES (TRANSISTOR); HIGH TEMPERATURE TESTING; INTEGRATED CIRCUIT TESTING; LEAKAGE CURRENTS; OXIDES; STRESSES;

HARD BREAKDOWN; SOFT BREAKDOWN;

MOSFET DEVICES;

EID: 0032661176     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (9)