Progressive breakdown statistics in ultra-thin silicon dioxides

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn 2003-January, Issue , 2003, Pages 157-163

  Loh, W Y ^a   Cho, B J ^a   Li, M F ^a   Chan, D S H ^a   Ang, C H ^b   Zhen, Z J ^b   Kwong, D L ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS; WEIBULL DISTRIBUTION;

DISTRIBUTION MODELS; DISTRIBUTION STATISTICS; FAILURE CRITERIA; GATE CURRENT; PROGRESSIVE BREAKDOWN; ULTRATHIN SILICON; WEIBULL;

FAILURE ANALYSIS;

EID: 34250748129     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPFA.2003.1222757     Document Type: Conference Paper

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