Dual gate oxide charging damage in damascene copper technologies

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 2000, Pages 109-112

  Stamper, Anthony K ^a   Chou, Anthony ^a   Hook, Terence B ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; ELECTRIC BREAKDOWN; ELECTRON TRAPS; HOT CARRIERS; INTEGRATED CIRCUITS; LEAKAGE CURRENTS; PERFORMANCE; PLASMA APPLICATIONS; SEMICONDUCTOR DEVICE MANUFACTURE;

DAMASCENE COPPER TECHNOLOGY; DUAL GATE OXIDE CHARGING DAMAGE; THRESHOLD VOLTAGE SHIFTS; VOLTAGE DISTRIBUTION;

GATES (TRANSISTOR);

EID: 0034512993     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (11)