Degradation dynamics of ultrathin gate oxides subjected to electrical stress

IEEE Electron Device Letters

Volumn 24, Issue 9, 2003, Pages 604-606

  Miranda, Enrique ^a   Cester, Andrea ^b,c  

^a UNIVERSIDAD DE BUENOS AIRES   (Argentina)

^b UNIVERSITY OF PADOVA   (Italy)

^c INFM   (Italy)

Author keywords

Dielectric breakdown; Reliability; SiO2

Indexed keywords

DIELECTRIC PROPERTIES; DIFFERENTIAL EQUATIONS; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRODES; ELECTRON TUNNELING; MATHEMATICAL MODELS; MOS CAPACITORS; RELIABILITY; SILICA;

DIELECTRIC BREAKDOWN; ELECTRICAL STRESS; TUNNELING CURRENT; ULTRATHIN GATE OXIDES; VERHULST DIFFERENTIAL EQUATION;

ULTRATHIN FILMS;

EID: 0141452016     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.816576     Document Type: Letter

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