Switching behavior of the soft breakdown conduction characteristic in ultra-thin (<5 nm) oxide MOS capacitors

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1998, Pages 42-46

  Miranda, E ^a   Sune, I ^a   Rodriguez, R ^a   Nafria, M ^a   Aymerich, X ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RESISTANCE; LEAKAGE CURRENTS; MOS DEVICES; SPURIOUS SIGNAL NOISE; SWITCHING;

ULTRATHIN GATE OXIDES;

CAPACITORS;

EID: 0031674379     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/relphy.1998.670440     Document Type: Conference Paper

References (21)