Evidence for defect-generation-driven wear-out of breakdown conduction path in ultra thin oxides

IEEE International Integrated Reliability Workshop Final Report

Volumn 2002-January, Issue , 2002, Pages 1-8

  Monsieur, F ^a,c   Vincent, E ^a   Ribes, G ^a   Huard, V ^b   Bmyere, S ^a   Roy, D ^a   Pananakakis, G ^c   Ghibaudo, G ^c  

^a STMICROELECTRONICS   (France)

^b CRandD labs   (France)

^c IMEP LAHC   (France)

Author keywords

Conduction path; Delay; Generation rate; Progressiveness; Runaway; Stored energy; Ultra thin oxides; Wearout

Indexed keywords

CONDUCTION PATHS; DEFECT GENERATION; DELAY; GENERATION RATE; PHYSICAL MECHANISM; PROGRESSIVENESS; RUNAWAY; STORED ENERGY; ULTRA-THIN OXIDE; WEAROUT;

DEFECTS;

EID: 34250721804     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2002.1194223     Document Type: Conference Paper

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