Model for the voltage and temperature dependence of the soft breakdown current in ultrathin gate oxides

Journal of Applied Physics

Volumn 97, Issue 1, 2005, Pages

  Avellan A ^a   Miranda, E ^b   Schroeder, D ^a   Krautschneider, W ^a  

^a HAMBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATORS; FERMI FUNCTION; TEMPERATURE DEPENDENCE; ULTRATHIN GATE OXIDES;

CAPACITORS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; FERMI LEVEL; MATHEMATICAL MODELS; MOS DEVICES; NETWORKS (CIRCUITS); PARAMETER ESTIMATION; THERMAL EFFECTS; TRANSISTORS;

OXIDES;

EID: 19944431600     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1827343     Document Type: Article

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