Gate oxide damage and charging characterization in a 0.13 μm, triple oxide (1.7/2.2/5.2nm) bulk technology

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn 2002-January, Issue , 2002, Pages 10-13

  Hook, T B ^a   Harmon, D ^a   Lai, Wing ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

Antenna measurements; Dielectric measurements; FETs; Gate leakage; Insulation; Microelectronics; Nitrogen; Oxidation; Testing; Threshold voltage

Indexed keywords

INSULATION; MICROELECTRONICS; NITROGEN; OXIDATION; TESTING;

ANTENNA MEASUREMENT; BULK TECHNOLOGIES; CHARGING DAMAGE; DIELECTRIC INTEGRITY; DIELECTRIC MEASUREMENTS; FETS; GATE LEAKAGES; THRESHOLD VOLTAGE SHIFTS;

THRESHOLD VOLTAGE;

EID: 78651574771     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PPID.2002.1042597     Document Type: Conference Paper

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